Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 387-392

  Hazdra, Pavel ^a   Komarnitskyy, Volodymyr V ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Defect Profiles; Helium; Hydrogen; Irradiation; Silicon

Indexed keywords

ALPHA PARTICLES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIODES; HYDROGEN; MICROMETERS; MONTE CARLO METHODS; PROTON IRRADIATION; SEMICONDUCTOR DOPING;

RADIATION DEFECTS; SPACE CHARGE LAYERS (SPR); WAFER DIODES;

SILICON WAFERS;

EID: 1642557021     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (7)

1. D. Silber, W.D. Nowak, W. Wondrak, B. Thomas, H. Berg, Proc. IEDM'85(1985), 162.
2. P. Hazdra, J. Rubes, J. Vobecky, Nucl. Instr. and Meth. B Vol. 192 (1999), p. 291.
3. P. Hazdra, K. Brand, J. Vobecky, Nucl. Instr. and Meth. B 192(2002), 291.
4. P. Lévêque, P. Pellegrino, A. Hallén, B.G. Svensson, V. Privitera, Nucl. Instr. and Meth. B Vol. 174 (2001), p. 297.
5. ATLAS User's Manual, SILVACO Int., 1997.
6. J.P. Biersack, L.G. Haggmark, Nucl. Instr. and Meth. Vol. 174(1980), p 257.
7. A. Hallén, N. Keskitalo, Nucl. Instr. and Meth. B Vol. 186(2002), p. 344.