Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 559-564

  Hazdra, Pavel ^a   Vobecký, Jan ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Gettering; Helium; Ion Implantation; Lifetime Control; Platinum; Silicon

Indexed keywords

ANNEALING; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); DOSIMETRY; ENTHALPY; HELIUM; ION IMPLANTATION; IONIZATION OF SOLIDS; PLATINUM COMPOUNDS; RADIATION DAMAGE;

GETTERING; HIGH-VOLTAGE CURRENT TRANSIENT SPECTROSCOPY (HVCTS);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 1642515944     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (10)

1. P. Hazdra, J. Vobecký, K. Brand, Nucl. Instr. and Meth. Vol. B 186(2002), p.414.
2. S.D. Brotherton, P. Bradley, J. Bicknell, J. Appl. Phys. Vol. 50(1979), p. 3396.
3. F.C. Frank, D. Turnbull, Phys. Rev. Vol. 104(1956), p. 617.
4. U. Gösele, W. Frank, A.Seeger, Appl. Phys. Vol. 23(1980), p.361.
5. B. Holm and K. Bonde Nielsen, J. Appl. Phys. Vol. 70(1995), p.5970.
6. D.C. Schmidt, B.G. Svensson, N. Kestikalo, S. Godey, E. Ntsoenzok, J.F. Barbot and C. Blanchard, J. Appl. Phys. Vol. 84 (1998), p. 4214.
7. D.C. Schmidt, B.G. Svensson, S. Godey, E. Ntsoenzok, J.F. Barbot and C. Blanchard, Appl. Phys. Lett. Vol. 74 (1999), p. 3329.
8. D.C.Schmidt, B.G.Svensson, J.F.Barbot and C.Blanchard, Appl.Phys.Lett.Vol.75(1999), p.364.
9. J.Vobecký, P. Hazdra, IEEE Electron Device Letters Vol. 23 (2002), p. 392.
10. P. Hazdra, K. Brand, J. Vobecký, Nucl. Instr. and Meth. Vol. B 192(2002), 291.