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Volumn 230, Issue 1-4, 2005, Pages 613-618

Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra

Author keywords

Amorphization; Ion channeling; Monte Carlo simulation; Point defects

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CRYSTAL LATTICES; ION IMPLANTATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; POINT DEFECTS; RADIATION DAMAGE; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 14744301906     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.110     Document Type: Conference Paper
Times cited : (3)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.