|
Volumn 230, Issue 1-4, 2005, Pages 613-618
|
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra
|
Author keywords
Amorphization; Ion channeling; Monte Carlo simulation; Point defects
|
Indexed keywords
AMORPHIZATION;
COMPUTER SIMULATION;
CRYSTAL LATTICES;
ION IMPLANTATION;
MOLECULAR DYNAMICS;
MONTE CARLO METHODS;
POINT DEFECTS;
RADIATION DAMAGE;
RELAXATION PROCESSES;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
ION CHANNELING;
LATTICE RELAXATION;
RUTHERFORD BACKSCATTERING CHANNELING (RBS-C);
SILICON;
|
EID: 14744301906
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2004.12.110 Document Type: Conference Paper |
Times cited : (3)
|
References (14)
|