Disturb free programming scheme for single transistor ferroelectric memory arrays

Integrated Ferroelectrics

Volumn 34, Issue 1-4, 2001, Pages 155-164

  Ullmann, M ^a   Goebel, H ^a   Hoenigschmid, H ^a   Haneder, T ^a  

^a HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

FEMFET; Ferroelectric; Field effect transistor; Memory array; Programming scheme; Read write disturb

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; GATES (TRANSISTOR); LOGIC CIRCUITS; POLARIZATION; SUBSTRATES; SYSTOLIC ARRAYS;

DISTURB FREE PROGRAMMING SCHEME; FERROELECTRIC MEMORY FIELD EFFECT TRANSISTOR; SINGLE TRANSISTOR FERROELECTRIC MEMORY ARRAYS;

FIELD EFFECT TRANSISTORS;

EID: 0035034424     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108012885     Document Type: Conference Paper

References (9)