Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 678-683

  Fares, B ^a   Gautier, B ^a   Baboux, N ^a   Prudon, G ^a   Holliger, P ^b   Dupuy, J C ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA GRENOBLE   (France)

Author keywords

AFM; Oxygen ion bombardment; Ripple topography; Silicon; SIMS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SPUTTERING; SURFACE ROUGHNESS;

OXYGEN ION BOMBARDMENT; RIPPLE TOPOGRAPHY; SECONDARY IONS; SURFACE ROUGHENING;

SURFACE CHEMISTRY;

EID: 2942616696     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.178     Document Type: Conference Paper

References (8)

1. Stevie F.A., Kahora P.M., Simons D.S., Chi P. J. Vac. Sci. Technol. A. 6:1988;76-79.
2. Elst K., Vandervorst W., Alay J. J. Vac. Sci. Technol. B. 11:1993;1968-1993.
3. Lewis G.W., Nobes M.J., Carter G., Whitton J.L. Nucl. Instrum. Meth. 170:1980;363.
4. Z.X. Liu, F.A. Alkemade, in: A. Benninghoven, et al. (Eds.), Proceedings of the Secondary Ion Mass Spectrometry, SIMS XII, 1999, pp. 505-508.
5. B.I. Prenitzer, L.A. Giannuzzi, B.W. Kempshall, J.M. Mckinley, F.A. Stevie, in: A. Benninghoven, et al. (Eds.), Secondary Ion Mass Spectrometry, SIMS XII, 1999, pp. 77-80.
6. Vajo J.J., Doty R.E., Cirlin E.-H. J. Vac. Sci. Technol. A. 14(5):1996;2709-2720.
7. Lau G.S., Tok E.S. Surf. Rev. Lett. 8:2001;453-457.
8. Wittmaack K. J. Vac. Sci. Technol. A. 8:1999;2246-2250.