Temperature-accelerated breakdown in ultra-thin SiON dielectrics

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1254-1258

  O'Connor, Robert ^a   Hughes, Greg ^a   Degraeve, Robin ^b   Kaczer, Ben ^b  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; EXTRAPOLATION; MATHEMATICAL MODELS; THERMAL EFFECTS;

SILICON OXYNITRIDE GATE DIELECTRICS; VOLTAGE STRESS; WEIBULL SLOPE;

SILICON COMPOUNDS;

EID: 9144262565     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/007     Document Type: Article

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