A simple systematic spiral inductor design with perfected Q improvement for CMOS RFIC application

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 2, 2005, Pages 523-528

  Lee, Chih Yuan ^a   Chen, Tung Sheng ^a   Deng, Joseph Der Son ^a   Kao, Chin Hsing ^a  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Poly shield; Proton implant; Q value; RF integrated circuit (RFIC); Spiral inductor

Indexed keywords

CMOS INTEGRATED CIRCUITS; INSULATING MATERIALS; ION IMPLANTATION; POLYSILICON; PRODUCT DESIGN; PROTON IRRADIATION; Q FACTOR MEASUREMENT; RADIO EQUIPMENT; THICKNESS MEASUREMENT;

POLY SHIELD; PROTON IMPLANTATION; Q VALUE; RF INTEGRATED CIRCUITS (RFIC); SPIRAL INDUCTORS;

ELECTRIC INDUCTORS;

EID: 14544273662     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.841216     Document Type: Conference Paper

References (10)

1. J. Craninckx and M. S. J. Steyaert, "A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors," IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 736-744, May 1997.
2. E. Ragonese, G. Girlando, and G. Palmisano, "A very accurate design of monolithic inductors in a 2D EM simulator," in IEEE Electronics, Circuits, Systems Technique Dig., vol. 3, 2002, pp. 1199-1202.
3. J. R. Long and M. A. Copeland, "The modeling, characterization, and design of monolithic inductors for silicon RF IC's," IEEE J. Solid-State Circuits, vol. 32, no. 3, pp. 357-369, Mar. 1997.
4. C. P. Yue and S. S. Wong, "Physical modeling of spiral inductors on silicon," IEEE Trans. Electron Devices, vol. 47, no. 3, pp. 560-568, Mar. 2000.
5. H. M. Greenhouse, "Design of planar rectangular microelectronic inductors," IEEE Trans. Parts, Hybrids, Packag., vol. PHP-10, no. 2, pp. 101-109, 1974.
6. J. B. Yoon, B. K. Kim, C. H. Han, E. Yoon, and C. K. Kim, "Surface micromachined solenoid on-Si and on-glass inductors for RF applications," IEEE Electron Device Lett., vol. 20, no. 9, pp. 487-489, Sep. 1999.
7. C. M. Nam and Y. S. Kwon, "High-performance planar inductor on thick oxidized porous silicon (OPS) substrate," IEEE Microwave Guided Wave Lett., vol. 7, no. 8, pp. 236-238, Aug. 1997.
8. T. Yoshitomi, Y. Sugawara, E. Morifuji, T. Ohguro, H. Kimijima, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "On-chip spiral inductors with diffused shields using channel-stop implant," in Int. Electron Devices Meeting Tech. Dig., 1998, pp. 540-543.
9. C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF ICs," IEEE J. Solid-State Circuits, vol. 33, no. 5, pp. 743-752, May 1998.
10. C. P. Liao, T. H. Huang, C. Y. Lee, D. Tang, S. M. Lan, T. N. Yang, and L. F. Lin, "Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors," IEEE Electron Device Lett., vol. 19, no. 12, pp. 461-462, Dec. 1998.