Growth and electronic structure of holmium silicides by STM and STS

Surface Science

Volumn 578, Issue 1-3, 2005, Pages 80-87

  Perkins, E W ^a   Scott, I M ^a   Tear, S P ^a  

^a UNIVERSITY OF YORK   (United Kingdom)

Author keywords

Growth; Lanthanides; Metal semiconductor interfaces; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicides; Solid phase epitaxy; Surface relaxation and reconstruction

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; DEPOSITION; ELECTRONIC STRUCTURE; HOLMIUM COMPOUNDS; LOW ENERGY ELECTRON DIFFRACTION; NUCLEATION; PHOTOEMISSION; PYROMETERS; QUARTZ; SCANNING TUNNELING MICROSCOPY;

METAL-SEMICONDUCTOR INTERFACES; SCANNING TUNNELING SPECTROSCOPIES; SILICIDES; SOLID PHASE EPITAXY; SURFACE RELAXATION AND RECONSTRUCTION;

RARE EARTH ELEMENTS;

EID: 14044254709     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.01.016     Document Type: Article

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