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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 229, Issue 2, 2005, Pages 246-252

Depth dependent elastic strain in ZnO epilayer: Combined Rutherford backscattering/channeling and X-ray diffraction

(4) Feng, Zhenxing a Yao, Shude b Hou, Lina b Jin, Ruiqin c

a MCGILL UNIVERSITY (Canada)

b PEKING UNIVERSITY (China)

c INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

Elastic strain; Lattice mismatich; Rutherford backscattering channeling; Tetragonal distortion

Indexed keywords

ELASTICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; STRAIN; THIN FILMS; X RAY DIFFRACTION;

ELASTIC STRAIN; LATTICE MISMATCH; RUTHERFORD BACKSCATTERING/CHANNELING; TETRAGONAL DISTORTION;

ZINC OXIDE;

EID: 13944251794 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2004.11.020 Document Type: Article

Times cited : (12)

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