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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 174, Issue 1-2, 2001, Pages 181-186

Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0 0 0 1)

(7) Wu, M F a,b Vantomme, A b,d Hogg, S b Langouche, G b Van Der Stricht, W c Jacobs, K c Moerman, I c

a PEKING UNIVERSITY (China)

b KU LEUVEN (Belgium)

c GHENT UNIVERSITY (Belgium)

d FUND FOR SCIENTIFIC RESEARCH (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; COMPOSITION EFFECTS; CRYSTAL LATTICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

RUTHERFORD BACKSCATTERING/CHANNELING;

SEMICONDUCTING FILMS;

EID: 0034825458 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00514-0 Document Type: Article

Times cited : (13)

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