Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Yang, C S ^a   Lai, Y J ^a   Chou, W C ^a   Chen, W K ^a   Lee, M C ^a   Kuo, M C ^b   Lee, J ^b   Shen, J L ^b   Jang, D J ^c   Cheng, Y C ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION POWER; PRONOUNCED SIGNATURES; REDSHIFTS; STEADY-STATE MODEL;

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DESORPTION; HEAT CONDUCTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ZINC COMPOUNDS; THERMOANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13644280055     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834985     Document Type: Article

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