Structural relaxation of amorphous silicon-germanium alloys: Molecular-dynamics study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 7966-7970

  Ishimaru, Manabu ^a   Yamaguchi, Mitsuhiro ^a   Hirotsu, Yoshihiko ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Amorphous semiconductor; Silicon germanium; Structural property; Structural relaxation; Vibrational property

Indexed keywords

ANNEALING; BOUNDARY CONDITIONS; COMPUTER SIMULATION; GERMANIUM ALLOYS; MOLECULAR DYNAMICS; OPTOELECTRONIC DEVICES; PHONONS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SEMICONDUCTOR; SILICON-GERMANIUM; STRUCTURAL PROPERTY; STRUCTURAL RELAXATION; VIBRATIONAL PROPERTY;

AMORPHOUS SILICON;

EID: 13644279097     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7966     Document Type: Article

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