Comment on “Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms”

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 23, 2001, Pages

  Ishimaru, Manabu ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

CRYSTALLIZATION; ENERGY; MATHEMATICAL ANALYSIS; MODEL; MOLECULAR DYNAMICS; SHORT SURVEY; TEMPERATURE;

EID: 0034905830     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.237401     Document Type: Article

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