Prevention of Si-contaminated nanocone formation during plasma enhanced CVD growth of carbon nanotubes

Carbon

Volumn 43, Issue 4, 2005, Pages 835-840

  Kim, Dong Wook ^a,b   Chen, L H ^b   Aubuchon, J F ^b   Chen, I C ^b   Jeong, Soo Hwan ^a   Yoo, In K ^a   Jin, S ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A. Carbon nanotubes; B. Chemical vapor deposition; C. Scanning electron microscopy, Transmission electron microscopy

Indexed keywords

ASPECT RATIO; GROWTH (MATERIALS); MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTER DEPOSITION; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

BIAS VOLTAGE; DIFFUSION BARRIERS; NANOCONES; SCANNING PROBE MICROSCOPES (SPM);

CARBON NANOTUBES;

EID: 13444305191     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2004.11.018     Document Type: Article

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