SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 275-278

Low temperature deposition of Al-doped zinc oxide films by ICP-assisted reactive DC magnetron sputtering

(5) Jung, S J a Han, Y H a Koo, B M a Lee, J J a Joo, J H b

a Seoul National University (South Korea)

b Kunsan National University (South Korea)

Author keywords

Al doped ZnO; Inductively coupled plasma (ICP); Reactive sputtering; TCO

Indexed keywords

ACETONE; ALUMINUM; ANTENNAS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FLAT PANEL DISPLAYS; HEATING; INDUCTIVELY COUPLED PLASMA; MAGNETRON SPUTTERING; MAGNETRONS; OPACITY; STOICHIOMETRY;

AL DOPED ZNO; REACTIVE SPUTTERING; TRANSPARENT CONDUCTING OXIDE (TCO); WORKING PRESSURE;

ZINC OXIDE;

EID: 13444292137 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.08.058 Document Type: Conference Paper

Times cited : (25)

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