X-band InGaP PHEMTs with 70% power-added efficiency

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1998, Pages 1671-1674

  Kao, Ming Yih ^a   Beam III, Edward A ^a   Saunier, Paul ^a   Frensley, William R ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

NOISE FIGURE; POWER ADDED EFFICIENCY (PAE);

MICROWAVE AMPLIFIERS;

EID: 0031620036     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)