Super low noise InGaP gated PHEMT

IEEE Electron Device Letters

Volumn 23, Issue 2, 2002, Pages 70-72

  Huang, H K ^b   Wang, Y H ^a,b   Wu, C L ^c   Wang, J C ^c   Chang, C S ^c  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

InGaP; Noise; PHEMT; Selective etching

Indexed keywords

DRAIN TO GATE BREAKDOWN VOLTAGE; EXTRINSIC TRANSCONDUCTANCE; GATE WIDTH DEVICES; HALL MOBILITIES; NOISE FIGURE; PINCH OFF VOLTAGE; SATURATION DRAIN CURRENT; SCHOTTKY CONTACTS; SELECTIVE WET RECESS ETCHING; TEMPERATURE STRESS;

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ETCHING; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036477450     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.981309     Document Type: Article

References (9)

1. W-band low-noise InAlAs/InGaAs lattice-matched HEMT's
2. Ultralow-noise W-band pseudomorphic InGaAs HEMT's
3. Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profiling
4. Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations
5. Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications
6. Novel HEMT structures using a strained InGaP Schottky layer
7. InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE
8. Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers
9. X-band InGaP PHEMT's with 70% power-added efficiency