InGaP PHEMTs for wireless power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 2155-2157

  Lan, E ^a   Pitts, B ^a   Mikhov, M ^a   Hartin, Olin ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POWER SUPPLIES TO APPARATUS; ETCHING; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

BARRIER LAYER MATERIAL; POWER ADDED EFFICIENCY; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE; WIRELESS POWER APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035686573     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967341     Document Type: Article

References (9)

1. X-band InGaP PHEMTs with 70% power-added efficiency
2. Pseudomorphic N-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers
3. InGaP/InGaAs HFET with high current density and high cut-off frequencies
4. HEMT-based millimeter-wave monolithic IC technology for 76 GHz automotive radar
5. 0.5P HEMT's for high-efficiency low-voltage power amplifiers: Design, fabrication, and device results
6. GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: Design, fabrication, and device results
7. P-HEMTs for low-voltage portable applications using filled gate fabrication process
8. AlGaAs/InGaAs power P-HEMTs for high-efficiency, low-voltage portable applications
9. 0.85As /GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage