InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Missous, Mohamed ^a   Aziz, Azlan Abdul ^a   Sandhu, Adarsh ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031169285     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l647     Document Type: Article

References (18)