Wave function engineering in W designed strained-compensated Si/Si 1-xGex/Si type II quantum wells for 1.55 μm optical properties

Optical Materials

Volumn 27, Issue 5, 2005, Pages 859-863

  Sfina, N ^a   Lazzari, J L ^b   Ben Zid, F ^a   Bhouri, A ^a   Said, M ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Band structure engineering; Oscillator strength; Quantum wells; Strained SiGe

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS;

BAND STRUCTURE ENGINEERING; OSCILLATOR STRENGTH; STRAINED SIGE; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 13444252743     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.073     Document Type: Conference Paper

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