Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 100-104

  Jung, S I ^a   Yoon, J J ^a   Park, H J ^a   Park, Y M ^a   Jeon, M H ^a   Leem, J Y ^a   Lee, C M ^b   Cho, E T ^b   Lee, J I ^b   Kim, J S ^c,e   Son, J S ^d   Lee, D Y ^f   Han, I K ^g  

^a Inje University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d Kyungwoon University   (South Korea)

^e Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^f Yeungnam University   (South Korea)

^g Korea Institute of Science and Technology   (South Korea)

Author keywords

AlAs barrier; Molecular beam epitaxy; Photoluminescence; Quantum dots

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; ENERGY GAP; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SELF ASSEMBLY; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; EMISSION PEAK; INTERDIFFUSION; REDSHIFT ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444251283     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.032     Document Type: Conference Paper

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