Erratum: Expression of concern: Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots, Jae-Young Leem, Minhyun Jeon, Jewon Lee, Guansik Cho, Cheul-Ro Lee, Jong Su Kim, Se-Kyung Kang, S.I. Ban, J.I. Lee, Hyung Koun Cho, Journal of Crystal Growth, Volume 252, Issue 4, May 2003, Pages 493–498 (Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots (2003) 252(4) (493–498), (S0022024803008662), (10.1016/S0022-0248(03)00866-2));Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots

Journal of Crystal Growth

Volumn 252, Issue 4, 2003, Pages 493-498

  Leem, Jae Young ^a   Jeon, Minhyun ^a   Lee, Jewon ^a   Cho, Guansik ^a   Lee, Cheul Ro ^b   Kim, Jong Su ^c   Kang, Se Kyung ^d   Ban, S I ^d   Lee, J I ^d   Cho, Hyung Koun ^e  

^a Inje University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Yeungnam University   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

^e Dong A University   (South Korea)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

QUASI-MONOLAYERS (QML);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037402731     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2021.126037     Document Type: Erratum

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