Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth

Journal of Crystal Growth

Volumn 226, Issue 4, 2001, Pages 443-450

  Nakahata, Takumi ^a   Yamamoto, Kazuma ^b   Tanimura, Junji ^a   Inagaki, Toru ^b   Furukawa, Taisuke ^a   Maruno, Shigemitsu ^a   Tokuda, Yasunori ^a   Miyamoto, Atushi ^b   Satoh, Shinichi ^a   Kiyama, Hiromi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Air Water Inc   (Japan)

Author keywords

A1. Defects; A1. Etching; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting silicon; B3. Field effect transistors

Indexed keywords

DRY ETCHING; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE CLEANING; VACUUM APPLICATIONS;

SELECTIVE EPITAXY;

SEMICONDUCTING SILICON;

EID: 0035427040     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01407-5     Document Type: Article

References (11)