High performance RF characteristics of raised gate/source/drain CMOS with Co salicide

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 136-137

  Ohguro, T ^a   Naruse, H ^a   Sugaya, H ^a   Nakamura, S ^a   Morifuji, E ^a   Kimijima, H ^a   Yoshitomi, T ^a   Morimoto, T ^a   Momose, H S ^a   Katsumata, Y ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; ELECTRIC RESISTANCE; ELECTRODES; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON; SUBSTRATES;

COBALT SALICIDE; RADIO FREQUENCY CHARACTERISTICS;

CMOS INTEGRATED CIRCUITS;

EID: 0031638357     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)