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Volumn 22, Issue 6, 2004, Pages 3016-3020
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Investigations of the Ga+ focused-ion-beam implantation in resist films for nanometer lithography applications
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
ELECTRON MICROSCOPES;
FAILURE ANALYSIS;
GALLIUM;
GALLIUM COMPOUNDS;
INTEGRATED CIRCUIT MANUFACTURE;
ION BEAM LITHOGRAPHY;
ION BEAMS;
PHOTORESISTS;
POLYMETHYL METHACRYLATES;
POSITIVE IONS;
REACTIVE ION ETCHING;
SCANNING ELECTRON MICROSCOPY;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
ION-BEAM-INHIBITED ETCHING (IBIE);
NANOMETER LITHOGRAPHY;
NEGATIVE-RESIST-IMAGE-BY-DRY-ETCHING (NERIME);
RESIST FILMS;
ION IMPLANTATION;
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EID: 13244295834
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1813451 Document Type: Conference Paper |
Times cited : (2)
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References (11)
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