Integration of the density gradient model into a general purpose device simulator

VLSI Design

Volumn 15, Issue 4, 2002, Pages 751-759

  Wettstein, Andreas ^a   Penzin, Oleg ^b   Lyumkis, Eugeny ^b  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b Integrated Systems Inc   (United States)

Author keywords

Density gradient model; Device simulation; Discretization; Quantization; Resonant tunneling

Indexed keywords

COMPUTER SIMULATION; EVALUATION; NUMERICAL METHODS; PARTIAL DIFFERENTIAL EQUATIONS; RESONANT TUNNELING;

DENSITY GRADIENT MODEL; SCHRODINGER EQUATION; SOFTWARE PACKAGE DESSIS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0036901263     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1080/1065514021000012363     Document Type: Article

References (24)

1. DESSIS 7.0 reference manual (2001). ISE Integrated Systems Engineering AG, Balgriststrasse 102, CH-8008 Zürich.
2. Stern, F. (1970) "Iteration methods for calculating self-consistent fields in semiconductor inversion layers", J. Comput. Phys. 6(1), 56-67.
3. Wettstein, A., Schenk, A., Scholze, A., Garretón, G. and Fichtner, W. (1997) "Charge carrier quantization effects in double-gated SOI MOSFETs", ULSI Sci. Technol. 1997, 613-621.
4. van Dort, M.J., Woerlee, P.H. and Walker, A.J. (1994) "A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions", Solid-State Electron. 37(3), 411-414.
5. Ancona, M.G. and Tiersten, H.F. (1987) "Macroscopic physics of the silicon inversion layer", Phys. Rev. B 35(15), 7959-7965.
6. Ancona, M.G., Yu, Z., Lee, W.-C., Dutton, R.W. and Voorde, P.V. (1999) "Simulation of quantum confinement effects in ultra-thin-oxide MOS structures", J. Technol. Comput. Aided Design (11).
7. Zhou, J.-R. and Ferry, D.K. (1992) "Ballistic phenomena in GaAs MESFETs: modelling with quantum moment equations", Semicond. Sci. Technol. 7(3B), B546-B548.
8. Gardner, C.L. (1994) "The quantum hydrodynamic model for semiconductor devices", SIAM J. Appl. Math. 54(2), 409-427.
9. Grubin, H.L., Govindan, T.R., Kreskovsky, J.P. and Stroscio, M.A. (1993) "Transport via the Liouville equation and moments of quantum distribution functions", Solid-State Electron. 36(12), 1697-1709.
10. Ancona, M.G. and Biegel, B.A. (2000) "Nonlinear discretization scheme for the density-gradient equations", SISPAD 2000, 196-199.
11. Wettstein, A., Schenk, A. and Fichtner, W. (2001) "Quantum device-simulation with the density-gradient model on unstructured grids", IEEE Trans. Electron Devices 48(2), 279-284.
12. Zhou, J.-R. and Ferry, D.K. (1992) "Simulation of ultra-small GaAs MESFET's using quantum moment equations-II: velocity overshoot", IEEE Trans. Electron Devices 39(8), 1793-1796.
13. Chen, Z., Cockburn, B., Gardner, C.L. and Jerome, J.W. (1995) "Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode", J. Comput. Phys. 117(2), 274-280.
14. Chen, Z. (1996) "A finite element method for the quantum hydrodynamic model for semiconductor devices", Comput. Math. Appl. 31(7), 17-26.
15. Wettstein, A., "Quantum Effects in MOS Devices" Ph.D. Thesis (Hartung-Gorre, Konstanz).
16. Scharfetter, D.L. and Gummel, H.K. (1969) "Large-signal analysis of a silicon read diode oscillator", IEEE Trans. Electron Devices 16(1), 64-77.
17. Gardner, C.L. and Ringhofer, C.A. (1996) "Smooth quantum potential for the hydrodynamic model", Phys. Rev. E 53(1), 157-167.
18. Ferry, D.K. and Zhou, J.-R. (1993) "Form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling", Phys. Rev. B 48(11), 7944-7950.
19. + double-gate SOI MOSFETs", Proc. 1995 IEEE Int. SOI Conf., 68-69.
20. Spinelli, A.S., Pacelli, A. and Lacaita, A.L. (2000) "Polysilicon quantization effects on the electrical properties of MOS transistors", IEEE Trans. Electron Devices 47(12), 2366-2371.
21. Schenk, A. and Heiser, G. (1997) "Modeling and simulation of tunneling through ultra-thin gate dielectrics", J. Appl. Phys. 81(12), 7900-7908.
22. Ancona, M.G. (1990) "Macroscopic description of quantum-mechanical tunneling", Phys. Rev. B 42(2), 1222-1233.
23. Ancona, M.G., Yu, Z., Dutton, R.W., Voorde, P.J.V., Cao, M. and Vook, D. (2000) "Density-gradient analysis of MOS tunneling", IEEE Trans. Electron Devices 47(12), 2310-2319.
24. Wettstein, A., Schenk, A., Scholze, A. and Fichtner, W. (1997) "The influence of localized states on gate tunnel currents-modeling and simulation", SISPAD 1997 Tech. Digest, 101-104.