Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages

  Yang, T H ^a   Luo, G L ^a   Chang, E Y ^a   Hsieh, Y C ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THERMAL CYCLING;

COMPOSITIONALLY GRADED BUFFER (CGB); INTERFACE-BLOCKING MECHANISM; SILANE; THREADING DISLOCATIONS;

DISLOCATIONS (CRYSTALS);

EID: 9744232173     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1781188     Document Type: Article

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