Ag metallization on suicides with nitride barriers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2804-2810

  Mitan, M M ^a,c   Kim, H C ^a,c   Alford, T L ^a   Malgas, G F ^b   Adams, Daniel ^b  

^a Arizona State University   (United States)

^b UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS FLOW RATES; RAPID THERMAL ANNEALERS (RTA); SILICIDES; SOLID PHASE REACTIONS;

ATOMIC FORCE MICROSCOPY; DIFFUSION; HYDROGEN PEROXIDE; NITRIDES; OPTICAL MICROSCOPY; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SILVER; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

METALLIZING;

EID: 13244257323     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1815312     Document Type: Article

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