Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO2

Materials Research Society Symposium Proceedings

Volumn 818, Issue , 2004, Pages 299-304

  Ho, V ^a   Choi, W K ^a,b   Chim, W K ^a,b   Teo, L W ^b   Du, A Y ^c   Tung, C H ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC CHARGE; ENERGY STORAGE; METAL INSULATOR TRANSITION; PERMITTIVITY; SHAPE MEMORY EFFECT; SILICA; SPUTTERING;

CAPPING OXIDE LAYERS; CO-SPUTTERING; INSULATOR LAYERS; METAL-INSULATOR-SILICON (MIS);

NANOSTRUCTURED MATERIALS;

EID: 12744280157     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-818-m11.29.1     Document Type: Conference Paper

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