Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Lee, C S ^a   Yang, W L ^a   Chen, H H ^a   Hsu, W C ^b   Chen, Y J ^b   Huang, J C ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Field effect transistor; Newton method

Indexed keywords

EID: 12744256713     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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