Strained channel transistor using strain field induced by source and drain stressors

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 219-224

  Yeo, Yee Chia ^a   Sun, Jisong ^a   Ong, Eng Hong ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; GERMANIUM COMPOUNDS; HOLE MOBILITY; LATTICE CONSTANTS; MATRIX ALGEBRA; SILICON COMPOUNDS; STRAIN MEASUREMENT; TENSILE TESTING;

DRAIN STRESSORS; STRAIN ENGINEERING; STRAIN FIELDS; TRANSISTOR CHANNELS;

MOSFET DEVICES;

EID: 12744250298     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b10.4     Document Type: Conference Paper

References (13)

1. J. Welser, J. L. Hoyt, and J. F. Gibbons, Technical Dig. International Electron Device Meeting, Dec. 1992, San Francisco CA, pp. 1000-1002.
2. K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. leong, A. Grill, and H.-S P. Wong, 2001 Symp. VLSI Technology, Dig. Technical Papers, pp. 59-60.
3. A. Shimizu, K. Hachimine, N. Ohki, H. Ohta, M. Koguchi, Y. Nonaka, H. Sato, and F. Ootsuka, Technical Dig. International Electron Device Meeting, Dec. 2001, Washington DC, pp. 433-436.
4. C.-H. Ge, C.-C. Lin, C.-H. Ko, C.-C. Huang, Y.-C. Huang, B.-W. Chan, B.-C. Perng, C.-C. Sheu, P.-Y. Tsai, L.-G. Yao, C.-L. Wu, T.-L. Lee, C.-J. Chen, C.-T. Wang, S.-C. Lin, Y.-C. Yeo, and C. Hu, Technical Dig. International Electron Device Meeting, Dec. 2003, Washington DC, pp. 73-76.
5. T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, and M. Bohr, Technical Dig. International Electron Device Meeting, Dec. 2003, Washington DC, pp. 978-980.
6. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. Mcintyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy, IEEE Elect. Dev. Lett. 25, pp. 191 (2004).
7. S. Gannavaram, N. Pesovic, and M. C. Öztürk, Technical Dig. International Electron Device Meeting, Dec. 2000, San Francisco CA, pp. 437-440.
8. P. Ranade, H. Takeuchi, W.-C. Lee, V. Subramanian, and T.-J. King, IEEE Trans. Electron Devices, 49, 1436 (2002).
9. S. C. Jain, A. H. Harker, A. Atkinson, and K. Pinardi, J. Appl. Phys. 78, 1630 (1995).
10. T. Benabbas, Y. Androussi, and A. Lefebvre, J. Appl. Phys. 86, 1945 (1999).
11. G. R. Liu and S. S. Quek, Semiconductor Science Technolology 17, 630 (2002).
12. Y. Kumagai, H. Ohta, H. Miura, F. Ito, K. Maekawa, and A. Shimizu, Extended Abstracts of the 2002 International Conf. on Solid State Devices and Materials, Nagoya, Japan, 2002, pp. 14-15.
13. International Technology Roadmap for Semiconductors (2003 update); available at http://public.itrs.net