Characterization of high quality ZnTe heteroepitaxy layers using low temperature buffer layers

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Park, S H ^a   Chang, J H ^a   Lee, J Y ^a   Kim, H S ^a   Yang, M ^a   Ahn, H S ^a   Yi, S N ^a   Oh, D C ^b   Koo, B H ^b,c   Yao, T ^b  

^a Korea Maritime University   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

^c Changwon National University   (South Korea)

Author keywords

Dislocation; Low temperature buffer; Molecular beam epitaxy; ZnTe

Indexed keywords

EID: 12744250268     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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