GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Kim, K H ^a   Lee, K J ^a   Park, J B ^a   Kim, D J ^a   Kim, H ^a   Ihm, Y E ^a   Kim, C S ^b   Lee, H C ^c   Kim, C G ^d   Yoo, S H ^d   Djayaprawira, D ^e   Takahashi, M ^e  

^a Chungnam National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d Korea Research Institute of Chemical Technology   (South Korea)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

GaMnN; Low temperature growth; MBE; Precursor

Indexed keywords

EID: 0037307102     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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