Effect of an Al pre-seeded AlN buffer on GaN films grown on Si(111) substrates by using SiC intermediate layers

Journal of the Korean Physical Society

Volumn 41, Issue 6, 2002, Pages 880-883

  Kwon, M K ^a   Jeong, Y H ^a   Shin, E H ^a   Yang, J W ^a   Lim, K Y ^a   Roh, J I ^a   Nahm, K S ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Al pre seeding; Epitaxy; Metalorganic chmical vaper deposition; Nitrides; Semiconducting silicon compounds

Indexed keywords

EID: 0036946519     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (12)

1. M. Osirmski and D. L. Barton, J. Korean Phys. Soc. 30, S13 (1997).
2. T. Lei, M. Fanciulli, R. J. Molmar, T. D. Moustakas, R. J. Graham and J. Scanlon, Appl. Phys. Lett. 59, 944 (1991).
3. T. Takeuchi, H. Amano, K. Hiramatsu, N. Sawaki and I. Akasaki, J. Crystal Growth 115, 634 (1991).
4. P. Kung, A. Saxler, X. Zhang, D. Walker, T. C. Wang, I. Fregus and M. Razeghi, Appl. Phys. Lett. 66, 2958 (1995).
5. N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X. Zhang and D. H. Rich, Appl. Phys. Lett. 71, 3569 (1997).
6. Y. Kim, C. C. Kim, K. W. Lee, K. S. Yu, T. J. Park and Y. Kim, Mater. Res. Soc. Symp. Proc. 449, 367 (1997).
7. P. Chen, R. Zhang, Z. M. Zhao, D. J. Xi, B. Shen, Z. Z. Chen, Y. G. Zhou, S. Y. Xie, W. F. Lu and Y. D. Zheng, J. Crystal Growth. 225, 150 (2001).
8. C. I. Park, J. H. Kang, K. C. Kim, E. K. Sub and K. Y. Lim, J. Korean Phys. Soc. 37, 1007 (2000).
9. J. H. Kang, C. I. Park, S. R. Jeon and K. Y. Lim, J. Korean Phys. Soc. 39, S70 (2001).
10. P. Chen, B. Shen, J. M. Zhu, Z. Z. Chen, Y. G. Zhou, S. Y. Xie, R. Zhang, P. Han, S. L. Gu, Y. D. Zheng, S. S. Jiang and D. Feng, Chin. Phys. Lett. 17, 224 (2000).
11. S. Tanaka, Y. Kawaguchi, N. Sawaki, M. Hibino and K. Hiramatsu, Appl. Phys. Lett. 76, 2701 (2000).
12. N. Miyata, H. Watanabe and M. Ichikawa, Appl. Phys. Lett. 73, 3923 (1998).