Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (1 0 · 0) GaN

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 131-139

  Kato, Tomohisa ^a   Kung, Patric ^b   Saxler, Adam ^b   Sun, Chien Jen ^b   Ohsato, Hitoshi ^a   Razeghi, Manijeh ^b   Okuda, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; LATTICE VIBRATIONS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SUBSTRATES; SURFACE STRUCTURE;

GALLIUM NITRIDE;

NITRIDES;

EID: 0031648553     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00364-3     Document Type: Article

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