Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 7029-7032

  Yoo, Young Zo ^a   Chikyow, Toyohiro ^a   Kawasaki, Masashi ^b   Onuma, Takeyohi ^c   Chichibu, Shigefusa ^c,d   Koinuma, Hideomi ^e  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d RIKEN   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Epitaxy; Hexagonal; II VI semiconductors; Microstructure; Pulsed laser deposition; Si; ZnS

Indexed keywords

ELECTRON EMISSION; ENERGY GAP; EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; LATTICE CONSTANTS; MICROSTRUCTURE; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; ZINC SULFIDE;

EXCITON BINDING;

THIN FILMS;

EID: 1242336294     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7029     Document Type: Article

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