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Volumn 38, Issue 22, 2002, Pages 1354-1355

Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EID: 0037168198     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020932     Document Type: Article
Times cited : (17)

References (8)
  • 1
    • 0036539579 scopus 로고    scopus 로고
    • Low-threshold strain-compensated InGaAs(N) (2 = 1.19-1.31 μm) quantum-well lasers
    • Tansu, N., and Mawst, J.L.: 'Low-threshold strain-compensated InGaAs(N) (2 = 1.19-1.31 μm) quantum-well lasers', IEEE Photonics Technol. Lett., 2002, 14, pp. 444-446.
    • (2002) IEEE Photonics Technol. Lett. , vol.14 , pp. 444-446
    • Tansu, N.1    Mawst, J.L.2
  • 3
    • 0034250629 scopus 로고    scopus 로고
    • Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
    • Ryu, S.W., and Dapkus, P.D.: 'Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates', Electron. Lett., 2000, 36, pp. 1387-1388.
    • (2000) Electron. Lett. , vol.36 , pp. 1387-1388
    • Ryu, S.W.1    Dapkus, P.D.2
  • 4
    • 0034225043 scopus 로고    scopus 로고
    • Low-threshold operation of 1.3 μm GaAsSb quantum-well lasers directly grown on GaAs substrates
    • Yamada, M., Anan, T., Tokutome, K., Kamei, A., Nishi, K., and Sugou, S.: 'Low-threshold operation of 1.3 μm GaAsSb quantum-well lasers directly grown on GaAs substrates', IEEE Photonics Technol. Lett., 2000, 12, pp. 774-776.
    • (2000) IEEE Photonics Technol. Lett. , vol.12 , pp. 774-776
    • Yamada, M.1    Anan, T.2    Tokutome, K.3    Kamei, A.4    Nishi, K.5    Sugou, S.6
  • 5
    • 0035440093 scopus 로고    scopus 로고
    • Continuous-wave operation of 1.3 μm GaAsSb GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
    • Quochi, F., Kliper, D.C., Cunningham, J.E., Dinu, M., and Snah, J.: 'Continuous-wave operation of 1.3 μm GaAsSb GaAs quantum-well vertical-cavity surface-emitting laser at room temperature', IEEE Photonics Technol. Lett., 2001, 13, pp. 921-923.
    • (2001) IEEE Photonics Technol. Lett. , vol.13 , pp. 921-923
    • Quochi, F.1    Kliper, D.C.2    Cunningham, J.E.3    Dinu, M.4    Snah, J.5
  • 7
    • 0001215007 scopus 로고    scopus 로고
    • Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
    • Liu, G., Chuang, S.L., and Park, S.H.: 'Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach', J. Appl. Phys., 2000, 88, pp. 5554-5561.
    • (2000) J. Appl. Phys. , vol.88 , pp. 5554-5561
    • Liu, G.1    Chuang, S.L.2    Park, S.H.3
  • 8
    • 0035948076 scopus 로고    scopus 로고
    • Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain
    • Chow, W.W. and Schneider, H.C.: 'Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain', Appl. Phys. Lett., 2001, 78, pp. 4100-4102.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 4100-4102
    • Chow, W.W.1    Schneider, H.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.