-
1
-
-
0036539579
-
Low-threshold strain-compensated InGaAs(N) (2 = 1.19-1.31 μm) quantum-well lasers
-
Tansu, N., and Mawst, J.L.: 'Low-threshold strain-compensated InGaAs(N) (2 = 1.19-1.31 μm) quantum-well lasers', IEEE Photonics Technol. Lett., 2002, 14, pp. 444-446.
-
(2002)
IEEE Photonics Technol. Lett.
, vol.14
, pp. 444-446
-
-
Tansu, N.1
Mawst, J.L.2
-
2
-
-
0035956033
-
High-performance InAs quantum-dot lasers near 1.3 μm
-
Qiu, Y., Gogna, P., Forouhar, S., Stiniz, A., and lester, L.F.: 'Highperformance InAs quantum-dot lasers near 1.3 μm', Appl. Phys. Lett., 2001, 79, pp. 3570-3572.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 3570-3572
-
-
Qiu, Y.1
Gogna, P.2
Forouhar, S.3
Stiniz, A.4
Lester, L.F.5
-
3
-
-
0034250629
-
Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
-
Ryu, S.W., and Dapkus, P.D.: 'Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates', Electron. Lett., 2000, 36, pp. 1387-1388.
-
(2000)
Electron. Lett.
, vol.36
, pp. 1387-1388
-
-
Ryu, S.W.1
Dapkus, P.D.2
-
4
-
-
0034225043
-
Low-threshold operation of 1.3 μm GaAsSb quantum-well lasers directly grown on GaAs substrates
-
Yamada, M., Anan, T., Tokutome, K., Kamei, A., Nishi, K., and Sugou, S.: 'Low-threshold operation of 1.3 μm GaAsSb quantum-well lasers directly grown on GaAs substrates', IEEE Photonics Technol. Lett., 2000, 12, pp. 774-776.
-
(2000)
IEEE Photonics Technol. Lett.
, vol.12
, pp. 774-776
-
-
Yamada, M.1
Anan, T.2
Tokutome, K.3
Kamei, A.4
Nishi, K.5
Sugou, S.6
-
5
-
-
0035440093
-
Continuous-wave operation of 1.3 μm GaAsSb GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
-
Quochi, F., Kliper, D.C., Cunningham, J.E., Dinu, M., and Snah, J.: 'Continuous-wave operation of 1.3 μm GaAsSb GaAs quantum-well vertical-cavity surface-emitting laser at room temperature', IEEE Photonics Technol. Lett., 2001, 13, pp. 921-923.
-
(2001)
IEEE Photonics Technol. Lett.
, vol.13
, pp. 921-923
-
-
Quochi, F.1
Kliper, D.C.2
Cunningham, J.E.3
Dinu, M.4
Snah, J.5
-
6
-
-
0033361751
-
2
-
2', J. Cryst. Growth, 1999, 207, pp. 255-265.
-
(1999)
J. Cryst. Growth
, vol.207
, pp. 255-265
-
-
Xie, Q.1
Van Nostrand, J.E.2
Jones, R.L.3
Sizelove, J.4
Look, D.C.5
-
7
-
-
0001215007
-
Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
-
Liu, G., Chuang, S.L., and Park, S.H.: 'Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach', J. Appl. Phys., 2000, 88, pp. 5554-5561.
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 5554-5561
-
-
Liu, G.1
Chuang, S.L.2
Park, S.H.3
-
8
-
-
0035948076
-
Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain
-
Chow, W.W. and Schneider, H.C.: 'Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain', Appl. Phys. Lett., 2001, 78, pp. 4100-4102.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 4100-4102
-
-
Chow, W.W.1
Schneider, H.C.2
|