Local structure analysis of Ga1-xInxN alloy using extended X-ray absorption fine structure measurements

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 45-48

  Miyajima, T ^a   Kudo, Y ^a   Liu, K Y ^a   Uruga, T ^b   Asatsuma, T ^a   Hino, T ^a   Kobayashi, T ^a  

^a SONY CORPORATION   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTRA; ATOMS; BINARY ALLOYS; BOND LENGTH; EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SEMICONDUCTOR ALLOYS; ZINC SULFIDE;

ATOMIC DISTANCES; COORDINATION NUMBER; EXTENDED X-RAY ABSORPTION FINE STRUCTURE MEASUREMENTS; INTER-ATOMIC DISTANCES; INTERNAL STRAINS; LOCAL ATOMIC STRUCTURES; LOCAL STRUCTURE; SECOND-NEAREST-NEIGHBOR;

X RAY ABSORPTION;

EID: 0035605222     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<45::aid-pssb45>3.0.co;2-%23     Document Type: Article

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