Total Dose Failures in Advanced Electronics from Single Ions

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1820-1830

  Oldham, T R ^a   Bennett, K W ^a   Beaucour, J ^b   Carriere, T ^b   Polvey, C ^b   Gamier, P ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b AIRBUS DEFENCE AND SPACE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; DOSIMETRY; ELECTRIC CHARGE; ERRORS; GATES (TRANSISTOR); MOS DEVICES; RADIATION EFFECTS; TRANSPORT PROPERTIES;

ADVANCED ELECTRONICS; CHARGE GENERATION; CHARGE RECOMBINATION; CHARGE TRANSPORT; CHARGE TRAPPING; CMOS MEMORIES; HARD ERRORS; SINGLE HEAVY IONS; TOTAL DOSE FAILURE;

IONS;

EID: 0027875525     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273474     Document Type: Article

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