Suppression of Avalanche Multiplication at the Periphery of Diffused Junction by Floating Guard Rings in a Planar InGaAs-InP Avalanche Photodiode

IEEE Photonics Technology Letters

Volumn 12, Issue 5, 2000, Pages 534-536

  Cho, S R ^a   Yang, S K ^a   Ma, J S ^a   Lee, S D ^a   Yu, J S ^a   Choo, A G ^a   Kim, T I ^a   Burm, J ^b  

^a SAMSUNG Electronics   (South Korea)

^b Sogang University   (South Korea)

Author keywords

Avalanche photodiodes; Floating guard rings; Optical communication

Indexed keywords

EID: 0010007121     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.841277     Document Type: Article

References (8)

1. M. A. Itzler, C. S. Wang, S. McCoy, N. Codd, and N. Komaba, "Planar bulk-InP avalanche photodiode design for 2.5 and 10 Gb/s applications," in Proc. ECOC'98, Madrid, Spain, Sept. 1998, pp. 59-60.
2. G.-C. Chi, D. J. Muehlner, F. W. Ostermayer, Jr., J. M. Fruend, K. J. O'Brien, R. Pawel, R. J. McCoy, R. C. Smith, and V. D. Mattera, Jr., "Planar InP/InGaAsP three-dimensional graded junction avalanche photodiode," IEEE Trans. Electron Devices, vol. ED-34, pp. 2265-2269, 1987.
3. J. N. Haralson, J. W. Parks, K. F. Brennan, W. Clark, and L. E. Tarof, "Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes," J. Lightwave Technol., vol. 15, pp. 2137-2140, 1997.
4. K. Taguchi, T. Torikai, Y. Sugimoto, K. Makita, H. Ishihara, S. Fujita, and K. Minemura, "Planar InP/InGaAs avalanche photodiodes with preferential lateral extended guard ring," IEEE Electron Device Lett., vol. EDL-7, pp. 257-258, 1986.
5. H. Sudo and M. Suzuki, "Surface degradation mechanism of InP/InGaAs APD's," IEEE J. Lightwave Technol., vol. 6, pp. 1496-1501, 1998.
6. Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackly, "A Planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction," J. Lightwave Technol., vol. 10, pp. 182-192, 1992.
7. Y. Liu, S. R. Forrest, V. S. Ban, K. M. Woodruff, J. Colosi, G. C. Erickson, M. J. Lange, and G. H. Olsen, "Simple, very low dark current, planar long-wavelength avalanche photodiode," Appl. Phys. Lett., vol. 53, pp. 1311-1313, 1988.
8. D. E. Ackly, J. Hladky, M. J. Lange, S. Mason, G. Erickson, G. H. Olsen, V. S. Ban, Y. Liu, and S. R. Forrest, "InGaAs/InP floating guard ring avalanche photodiodes fabricated by double diffusion," IEEE Photon. Technol. Lett., vol. 2, pp. 55-57, 1990.