High-brightness laser diodes using angular filtering by total reflection

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4287, Issue , 2001, Pages 195-201

  Rogg, J ^a   Boucke, K ^a   Kelemen, M T ^a   Rinner, F ^a   Pletschen, W ^a   Kiefer, R ^a   Walther, M ^a   Mikulla, M ^a   Poprawe, R ^a   Weimann, G ^a  

^a FRAUNHOFER GESELLSCHAFT   (Germany)

Author keywords

High brightness; High power; InGaAs AlGaAs; Laserdiodes; Semiconduct or; Z laser

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; LASER BEAMS; LASER MODES; LIGHT REFLECTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; WAVE EQUATIONS;

ANGULAR FILTERING; HIGHER ORDER LASER MODES; ONE-DIMENSIONAL CARRIER DIFFUSION EQUATION; PADE APPROXIMATION; POWER SEMICONDUCTOR LASER; TWO-DIMENSIONAL STEADY STATE WAVE EQUATION;

SEMICONDUCTOR LASERS;

EID: 0007410697     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.429801     Document Type: Article

References (8)

1. European patent office
2. Semiconductor amplifiers and lasers with tapered gain regions
3. High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures
4. Three-core arrow-type diode laser: Novel high-power, single-mode device, and effective master oscillator for flared antiguided mopa's
5. Spectral properties of angled-grating high-power semiconductor lasers
6. Theory of grating-confined broad-area lasers
7. Numerical simulations of new high-power, high-brightness diode laser structures
8. Wide-angle beam propagation using padé approximant operators