메뉴 건너뛰기




Volumn 4580, Issue , 2001, Pages 11-18

High-power 980 nm laser diodes by MBE

Author keywords

980 nm; Diode laser; EDFA; Fiber coupling; High brightness; High power; Raman amplification

Indexed keywords

AMPLIFICATION; EXTRAPOLATION; FIBER LASERS; HIGH POWER LASERS; MOLECULAR BEAM EPITAXY; OPTICAL FIBER COUPLING; RELIABILITY; SINGLE MODE FIBERS;

EID: 0035776281     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.444955     Document Type: Article
Times cited : (8)

References (17)
  • 1
    • 0032224945 scopus 로고    scopus 로고
    • Reliability aspects of 980 nm pump lasers in EDFA applications
    • Reliability Aspects of 980 nm Pump Lasers in EDFA Applications, A. Oosenbrug, SPIE Vol. 3284, pp. 20, 1998
    • (1998) SPIE , vol.3284 , pp. 20
    • Oosenbrug, A.1
  • 2
    • 84996557442 scopus 로고    scopus 로고
    • Wavelength transmission multiplexing in long haul transmission systems
    • San Francisco, USA
    • Wavelength Transmission Multiplexing in Long Haul Transmission Systems, N. S. Bergano, Proc. LEOS 97, Vol. 2, pp. 37, San Francisco, USA, 1997
    • (1997) Proc. LEOS 97 , vol.2 , pp. 37
    • Bergano, N.S.1
  • 3
    • 0001379816 scopus 로고
    • Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets
    • Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets, A. Moser, E. E. Latta, J. Appl. Physics, 71, 4848 - 4853, 1992
    • (1992) J. Appl. Physics , vol.71 , pp. 4848-4853
    • Moser, A.1    Latta, E.E.2
  • 4
    • 0003553174 scopus 로고
    • Reliability and degradation of semiconductor lasers and LEDs
    • Artech House, Boston
    • Reliability and degradation of semiconductor lasers and LEDs, M. Fukuda, Artech House, Boston, 1991
    • (1991)
    • Fukuda, M.1
  • 5
    • 0000828150 scopus 로고
    • Beam-quality of InGaAs ridge lasers at high output power
    • Beam-quality of InGaAs ridge lasers at high output power, Appl. Optics, Vol.34, No. 27, pp. 6118, 1995
    • (1995) Appl. Optics , vol.34 , Issue.27 , pp. 6118
  • 8
    • 0027615214 scopus 로고
    • High-power, near-diffraction limited large area traveling - Wave semiconductor amplifiers
    • High-Power, Near-Diffraction Limited Large Area Traveling - Wave Semiconductor Amplifiers, L. Goldberg, D. Mehuys, M. R. Surette, and D. C. Hall, IEEE J. Quant. Electron., 29, pp. 2028-2043, 1993
    • (1993) IEEE J. Quant. Electron. , vol.29 , pp. 2028-2043
    • Goldberg, L.1    Mehuys, D.2    Surette, M.R.3    Hall, D.C.4
  • 11
    • 0032223958 scopus 로고    scopus 로고
    • Improved beam quality for high power tapered laser diodes with LMG (Low Modal Gain)-epitaxial layer structures
    • In-Plane Semiconductor lasers: from Ultraviolet to Mid-Infrared
    • Improved Beam Quality for High Power Tapered Laser Diodes with LMG (Low Modal Gain)-Epitaxial Layer Structures, M. Mikulla, A. Schmitt, P. Chazan, A. Wetzel, G. Bihlmann, R. Kiefer, R. Moritz, J. Braunstein, and G. Weimann, SPIE Proc. Vol. 3284, In-Plane Semiconductor lasers: from Ultraviolet to Mid-Infrared, pp. 72-79, 1998
    • (1998) SPIE Proc. , vol.3284 , pp. 72-79
    • Mikulla, M.1    Schmitt, A.2    Chazan, P.3    Wetzel, A.4    Bihlmann, G.5    Kiefer, R.6    Moritz, R.7    Braunstein, J.8    Weimann, G.9
  • 12
    • 0011101983 scopus 로고    scopus 로고
    • Raman amplification - Longer, wider, faster, cheaper
    • March
    • Raman Amplification - Longer, Wider, Faster, Cheaper, R. Schafer and J. Jungjohann, Compound Semiconductor 7(2), pp. 41, March 2001
    • (2001) Compound Semiconductor , vol.7 , Issue.2 , pp. 41
    • Schafer, R.1    Jungjohann, J.2
  • 16
    • 0001471602 scopus 로고    scopus 로고
    • Tapered high-power, high-brightness diode lasers: Design and performance
    • Tapered High-Power, High-Brightness Diode Lasers: Design and Performance, M. Mikulla, High-Power Diode Lasers, Topics Appl. Phys. 78, 265-288 (2000)
    • (2000) High-Power Diode Lasers, Topics Appl. Phys. , vol.78 , pp. 265-288
    • Mikulla, M.1
  • 17
    • 0027615214 scopus 로고
    • High-power, near-diffraction limited large area traveling - Wave semiconductor amplifiers
    • High-Power, Near-Diffraction Limited Large Area Traveling - Wave Semiconductor Amplifiers, L. Goldberg, D. Mehuys, M. R. Surette, and D. C. Hall, IEEE J. Quant. Electron., 29, pp. 2028-2043, 1993
    • (1993) IEEE J. Quant. Electron. , vol.29 , pp. 2028-2043
    • Goldberg, L.1    Mehuys, D.2    Surette, M.R.3    Hall, D.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.