Monomode emission at 350mW and high reliability with InGaAs/AIGaAs (λ = 1020nm) ridge waveguide laser diodes

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 778-779

  Beister, G ^a   Bugge, F ^a   Erbert, G ^a   Maege, J ^a   Ressel, P ^a   Sebastian, J ^a   Thies, A ^a   Wenzel, H ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; OPTICAL PUMPING; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

MONOMODE EMISSIONS; RIDGE WAVEGUIDE (RW) LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0032046278     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980581     Document Type: Article

References (6)

1. OOSENBRUG, A., HARDER, C.S., JAKUBOWICZ. A., and ROENTGEN, P.: 'Power integrity of 980nm pump lasers at 200mW and above'. Proc. 9th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS '96, Boston, MA, USA, 18-21 November 1996, Paper TuZ3, pp. 348-349
2. 0 oxide stripe-geometry 980-nm laser diodes'. SPIE Proc. Series, Laser Diodes and Application II, 1996, Vol. 2682, pp. 11-19
3. SAVOLAINEN, P., TOIVONEN, M., ASONEN, H., PESSA, M., and MURISON, R.: 'High-performance 980-nm strained-layer GaInAsGaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy', IEEE Photonics Technol. Lett., 1996, 8, (8), pp. 986-988
4. DUTTA, N.K., HOBSON, W.S., VAKHSHOORI, D., HAN, H., FREEMAN, P.N., DE JONG, J.F., and LOPATA, J.: 'Strain compensated InGaAs-GaAsPInGaP laser', IEEE Photonics Technol. Lett., 1996, 8, (7), pp. 852-854
5. ERBERT, G., BEISTER, G., BUGGE, F., MAEGE, J., RESSEL, P., SEBASTIAN, J., VOGEL, K., WENZEL, H., and WEYERS, M.: 'Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020nm) laser diodes', Electron. Lett., 1997, 33, pp. 778-779
6. CHAND, N., HOBSON, W.S., DE JONG, J.F., PARAYANTHAL, P., and CHAKRABARTI, U.K.: 'ZnSe for mirror passivation of high power GaAs based lasers', Electron. Lett., 1996, 32, pp. 1595-1596