Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2002, Pages 81-82

  Kelemen, M T ^a   Weber, J ^a   Rogg, J ^a   Rinner, F ^a   Mikulla, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTROMAGNETIC WAVE DIFFRACTION; OPTICAL WAVEGUIDES; PARAMETER ESTIMATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

FILAMENTATION;

SEMICONDUCTOR LASERS;

EID: 0036450464     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. E.S. Kintzer, J.N. Walpole, S.R. Chinn, C.A. Wang, and L.J. Missaggia, "High-Power, Strained-Layer Amplifiers and Lasers with Tapered Gain Regions", IEEE Photon. Technol. Lett., Vol. 5, pp. 605-608, 1993.
2. M. Mikulla, M.T. Kelemen, M. Walther, R. Kiefer, R. Moritz, and G. Weimann, "High-power 980 nm laser diodes by MBE," SPIE Proc., Vol. 4580, Optoelectronics, Materiais, and Devices for Communications, 11-18, 2001.
3. M. Mikulla, "Tapered High-Power, High-Brightness Diode Lasers: Design and Performance", High-Power Diode Lasers, Topics Appl. Phys., 78, 265-288, 2000.
4. K. Boucke, "Numerical simulations of new high-power, high-brightness diode laser structures", in 2000 17th International Semiconductor Laser Conference, Monterey, CA, pp. 99-100, 2000.