Novel thyristor-based SRAM cell (T-RAM) for high-speed, low-voltage, giga-scale memories

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 283-286

  Nemati, Farid ^a   Plummer, James D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); MOSFET DEVICES; NEGATIVE RESISTANCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY; THYRISTORS;

NEGATIVE DIFFERENTIAL RESISTANCE; THYRISTOR BASED STATIC RANDOM ACCESS MEMORY CELL;

RANDOM ACCESS STORAGE;

EID: 0033314262     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)