Ultra-fast electroabsorption modulator integrated DFB lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 428-431

  Takeuchi, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIT ERROR RATE; MODULATORS; ULTRAFAST PHENOMENA;

ELECTROABSORPTION MODULATORS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0034853711     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 320-Gbit/s, 100-km WDM repearterless transmission using fully encoded 40-Gbit/s optical duobinary channels with dispersion tolerance of 380 ps/nm
2. Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator
3. Polarization independent InGaAs/InAlAs strained MQW electroabsorption modulator with 42 GHz bandwidth
4. Frequency response of an optical intensity modulator monolithically integrated with a DFB laser
5. 20 Gbit/s, 1.55 μm strained-InGaAsP MQW modulator integrated DFB laser module
6. High-performance modulator/integrated light sources grown by an in-plane band-gap energy-control technique
7. High-performance modulator/integrated light sources grown by an in-plane band-gap energy-control technique
8. NRZ Operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser
9. Traveling-wave electrode electroabsorption modulator integrated DFB lasers (TW-EADFBs) for over 40-Gbit/s transmission