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Volumn 54, Issue 3-4, 2000, Pages 263-275

Analytical model for turn-on characteristics of short channel polycrystalline-silicon thin-film transistor for circuit simulation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

EID: 0034501807     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00412-3     Document Type: Article
Times cited : (9)

References (14)
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    • Brotherton, S.D.1
  • 3
    • 0023294217 scopus 로고
    • A model of current-voltage characteristics in polycrystalline silicon thin-film transistors
    • Serikawa T., Shirai S., Okamoto A., Suyama S. A model of current-voltage characteristics in polycrystalline silicon thin-film transistors. IEEE Trans. Electron Devices. 34:1987;321-324.
    • (1987) IEEE Trans. Electron Devices , vol.34 , pp. 321-324
    • Serikawa, T.1    Shirai, S.2    Okamoto, A.3    Suyama, S.4
  • 4
    • 0029346006 scopus 로고
    • An analytical model for the above-threshold characteristics of polysilicon thin-film transistors
    • Chern H.N., Lee C.L., Lei T.F. An analytical model for the above-threshold characteristics of polysilicon thin-film transistors. IEEE Trans. Electron Devices. 42:1995;1240-1246.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1240-1246
    • Chern, H.N.1    Lee, C.L.2    Lei, T.F.3
  • 5
    • 0026854110 scopus 로고
    • Analysis of current-voltage characteristics of low-temperature-processed polysilicon thin-film transistors
    • Ono K., Aoyama T., Konishi N., Miyata K. Analysis of current-voltage characteristics of low-temperature-processed polysilicon thin-film transistors. IEEE Trans. Electron Devices. 39:1992;792-801.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 792-801
    • Ono, K.1    Aoyama, T.2    Konishi, N.3    Miyata, K.4
  • 6
    • 0025955121 scopus 로고
    • Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film
    • Yamauchi N., Hajjar J.J., Raif R. Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film. IEEE Trans. Electron Devices. 38:1991;55-59.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 55-59
    • Yamauchi, N.1    Hajjar, J.J.2    Raif, R.3
  • 7
    • 0017466066 scopus 로고
    • A simple two-dimensional model for IGFET operation in the saturation region
    • El-Mansy Y.A., Boothroyd A.R. A simple two-dimensional model for IGFET operation in the saturation region. IEEE Trans. Electron Devices. 24:1977;254-262.
    • (1977) IEEE Trans. Electron Devices , vol.24 , pp. 254-262
    • El-Mansy, Y.A.1    Boothroyd, A.R.2
  • 8
    • 0016597193 scopus 로고
    • The electrical properties of polycrystalline silicon films
    • Seto J.Y.W. The electrical properties of polycrystalline silicon films. J. Appl. Phys. 46:1975;5247-5254.
    • (1975) J. Appl. Phys. , vol.46 , pp. 5247-5254
    • Seto, J.Y.W.1
  • 9
    • 0016113965 scopus 로고
    • A simple theory to predict the threshold voltage of short-channel IGFETs
    • Yau L.D. A simple theory to predict the threshold voltage of short-channel IGFETs. Solid-State Electron. 17:1974;1059-1063.
    • (1974) Solid-State Electron. , vol.17 , pp. 1059-1063
    • Yau, L.D.1
  • 11
    • 0030241288 scopus 로고    scopus 로고
    • Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs
    • Jacunski M.D., Shur M.S., Hack M. Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs. IEEE Trans. Electron Devices. 43:1996;1433-1439.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1433-1439
    • Jacunski, M.D.1    Shur, M.S.2    Hack, M.3
  • 14
    • 0030388125 scopus 로고    scopus 로고
    • A physically-based built-in Spice poly-Si TFT model for circuit simulation and reliability evaluation
    • Chung S.S., Chen D.C., Cheng C.T., Yeh C.F. A physically-based built-in Spice poly-Si TFT model for circuit simulation and reliability evaluation. Proc. of IEDM. 1996;139-142.
    • (1996) Proc. of IEDM , pp. 139-142
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.