Interpretation of reflectance anisotropy spectroscopy spectra of ZnSe(001) grown on GaAs(001) in terms of bulk, interface, and surface contributions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2350-2354

  Frisch, A M ^a   Schultz, Ch ^a   Herrmann, T ^a   Emiliani, V ^a   Wolfframm, D ^b   Evans, D A ^b   Korn, M ^c   Rossow, U ^d   Esser, N ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b ABERYSTWYTH UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF WÜRZBURG   (Germany)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644285918     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590173     Document Type: Article

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