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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2757-2760

Molecular beam epitaxy grown ZnSe studied by reflectance anisotropy spectroscopy and reflection high-energy electron diffraction

(1) Zettler, J T a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PHOTONS; REFLECTOMETERS; SELENIUM; SPECTROSCOPIC ANALYSIS; SURFACES;

PHOTON ENERGY; REFLECTANCE ANISOTROPY SPECTROSCOPY; SURFACE RECONSTRUCTION; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030189742 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.588826 Document Type: Article

Times cited : (12)

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