Hydrogen induced structure changes of GaAs(100) c(4 × 4), (2 × 4) and (4 × 2) surfaces

Surface Science

Volumn 352-354, Issue , 1996, Pages 66-70

  Pahlke, D ^a   Arens, M ^a   Esser, N ^a   Wang, D T ^b   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Auger electron spectroscopy; Electron energy loss spectroscopy; Gallium arsenide; Hydrogen; Low energy electron diffraction (LEED); Reflection spectroscopy; Single crystal surfaces

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; GAS ADSORPTION; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE TREATMENT; SURFACES;

HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; REFLECTANCE ANISOTROPY SPECTROSCOPY; STRUCTURAL CHANGES; SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0030147719     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01092-0     Document Type: Article

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